| 摘要 |
PURPOSE:To obtain a high output laser by interposing a moire DH junction structure having an active layer in thickness shorter than the wavelength in a tube by guide layers having a refractive index larger than the active layer and smaller than a clad layer, superposing an insulating clad layer, and providing a moire carrier injection layer. CONSTITUTION:An n-Al0.5Ga0.5As film 13, an Al0.15Ga0.85As active layer 14 of approx. 0.04mum, and a p type Al0.5Ga0.5As film 15 are superposed on a laminate of an n type Al0.38Ga0.62As clad film 11 and an n type Al0.25Ga0.75As guide film 12 under accurate film thickness control by a MOCVD method, selectively etched with HF and H2O2+NH3OH to form a raised region 16. After the surface is slightly etched with gas, a p type Al0.25Ga0.75As film 17 is formed in a uniform thickness, ultrafine amount of O2 is mixed to laminate an insulating Al0.4Ga0.6As clad film 18 and an n type GaAs film 19. Then, a Zn diffuse layer 20 which arrives at the layer 17 is formed on the front on the region 16, and ohmic electrodes 20, 21 are attached. The laser according to the construction is oscillated with low threshold value in high efficiency to obtain a large light output due to equiconcentrical and stable basic lateral mode. |
