| 摘要 |
PROBLEM TO BE SOLVED: To realize stable film formation by stabilizing film formation conditions and surely prevent leakage of CVD gas from a semiconductor manufacturing device in a semiconductor manufacturing device for forming a film in a semiconductor substrate by a CVD method. SOLUTION: Shutters 6a, 6b, which can be opened and closed independently, are provided to a load part 6. A normal pressure chemical gas growth processor 8 is disposed with an inlet 8a adjacent to the shutter 6b. An unload part 7 having shutters 7a, 7b which can be opened and closed independently is disposed with the shutter 7a adjacent to an outlet 8b of the processor 8.
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