| 摘要 |
A wiring structure of a semiconductor device, includes: an insulating layer formed on a base member; a first metal layer covered with the insulating layer; a second metal layer having a plurality of electrode parts which are arranged on the insulating layer to be spaced from each other and which have a thickness larger than the first metal layer, the insulating layer having a plurality of via holes which connect the first metal layer and the plurality of electrode parts; and a plurality of through wiring lines which are located within the plurality of via holes and which electrically connect the plurality of electrode parts to the first metal layer. |
