发明名称 REFERENCE VOLTAGE CIRCUIT
摘要 Provided is a reference voltage circuit which is resistant to change in temperature, and also can output the reference voltage of a low GND terminal with a low voltage and a low consumption current. The reference voltage circuit comprises a first NMOS transistor which is connected to a current mirror circuit and is connected to a drain by interposing a first resistance by a gate, and a second NMOS transistor which has a gate connected to the drain of the first NMOS transistor, is connected to a GND terminal by interposing a second resistance by a source, and has a threshold value voltage which is lower than the threshold value voltage of the first NMOS transistor. The reference voltage circuit outputs a reference voltage from the source of the second NMOS transistor.
申请公布号 KR20160106498(A) 申请公布日期 2016.09.12
申请号 KR20160021798 申请日期 2016.02.24
申请人 SII SEMICONDUCTOR CORPORATION 发明人 UTSUNOMIYA FUMIYASU
分类号 G05F3/20;G05F3/24;G11C5/14 主分类号 G05F3/20
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