| 摘要 |
PURPOSE:To prevent a pattern from becoming thinner or wider at the lower end of an upper-layer resist by applying the upper-layer resist after subjecting the surface of a layer containing a silicon-containing resin to a hydrophobic treatment and heating the layer at such a temperature that does not decompose the layer, but scatter the hydrophobe. CONSTITUTION:A lower-layer resist 2 is formed on a polysilicon substrate 1 having a level difference by applying a novolak resin to the surface of the substrate 1 and hardening the resin by heating. Then an intermediate layer 3 is formed by applying and baking an SOG. Successively, the surface of the layer 3 is subjected to hydrophobic treatment by heating the substrate 1 in a processing device filled with hexamethyldisilazane vapor. Thereafter, the excessive hexamethyldisilazane remaining on the surface of the layer 3 is removed by heating the substrate 1 on a hot plate heated to 270 deg.C for 90 minutes. After removal, an upper-layer resist 4 is formed by immediately applying a negative chemically amplified resist and pre-baking the resist. The upper-layer resist pattern 4' thus formed by exposure and development has no thinning part at its lower end. |
