MANUFACTURING DEVICE OF SEMICONDUCTOR ELEMENT AND METHOD OF MANUFACTURE

摘要

PURPOSE:To obtain a semiconductor element with excellent characteristics and a reliability by radiating a hydrogen ion and an ion that contains an element that is a dopant of the semiconductor simultaneously to a semiconductor film or a substrate and by forming a thin film subsequent to the ion radiation without exposing to the air. CONSTITUTION:Hydrogen gas and a gas that contains a dopant element are introduced through a gas introduction pipe 17. A plasma 19 is generated by high frequency power applied between an electrode 11 and a conductor container 8 in the conductor container 8 in low pressure by a vacuum pump 8. An ion 21 in a plasma 19 is accelerated from the time it passes a board with multiple holes 22 arranged at an opening part of an electrode 13 till the time it reaches a board with multiple holes 23 at ground potential and applied on a sample 25 on a substrate base 24. A thin film of metals is deposited on the sample 25 on a base 29 by introducing gases such as Ar through a gas introduction pipe 30 into a deposition chamber, generating a plasma by the high frequency power applied to a target electrode 28 in low pressure by a vacuum pump 31 and sputtering the target electrode 28.