| 摘要 |
1,180,648. Semi-conductor devices. THOMSON-CSF. 1 June, 1967 [3 June, 1966], No. 25447/67. Heading H1K. [Also in Division C7] A tellurium body is anodized in an electrolyte comprising a mixture of a non-aqueous solvent (e.g. pyridine) saturated with TeO 2 and of water, the proportion of water (e.g. 1% by weight) being such that the oxide film produced is non-porous. The Figure (not shown) illustrates oxidation of a Te plate (1) held in a Ta jaw arrangement (2) and immersed in an electrolyte (3). The jaw and plate are connected as anode and a Pt electrode (5) as cathode. Oxide coatings are formed on both the jaw and plate. Oxidation is at a constant current below or equal to 1 mA./cm.<SP>2</SP> of oxidizable surface until a pre-set voltage corresponding to the desired oxide thickness is reached. The process can be used in the manufacture of semi-conductor devices. The tellurium oxide film produced can be used, either to protect the surface of a finished device or in the control electrode of an IGFET. |
