| 摘要 |
1,168,219. Semi-conductor device. S. TESZNER. 11 April, 1968 [11 April, 1967], No. 17656/68. Heading H1K. A semi-conductor field effect device has two constricted regions 46 and 48 in its channel between the source 45 and the drain 49, both channel regions having smaller cross-sectional area than the channel portion at the gate 47. The constricted region 46 is shorter than the diffusion length of the minority carriers and long enough for the electric field in it to be less than the critical field value at which the carrier mobility decreases with increasing field so that the current-voltage characteristic, Fig. 5, not shown, is linear. In a further embodiment, Fig. 11, not shown, the constricted region (66) is much shorter, so that the electric field in it is greater than the critical field value at which the carrier velocity is constant, corresponding to a saturation current-voltage characteristic, Fig. 6, not shown. The device is made of silicon, germanium, or a Group III-V compound, and being bi-stable is suitable for use in a flip-flop circuit. In a further embodiment, Fig. 18, not shown, the channel is perpendicular to the major surface of the semi-conductor wafer and the constrictions (90) are formed by doped regions (86, 87) buried in the wafer. |
