| 摘要 |
PURPOSE:To obtain high quality silicon single crystal with a little lattice defect, lattice asymmetry and residual strain by epitaxially growing a silicon crystal the lattice constant of which coincides with insulating semiconductor in II-VI groups and using this semiconductor as substrate. CONSTITUTION:In place of sapphire substrates that are ordinarily used a single silicon crystal is grown on a semiconductor crystal substrate of an insulating element in II-VI groups that has the same cubic crystal as silicon and the same lattice constant as that of silicon. As a result high quality silicon crystal is given that has little lattice defect, lattice asymmetry and strain. Integrated circuits of this silicon provide devices with small parasitic capacitance and wattage. |
