| 发明名称 | Fin field effect transistor (FinFET) device structure with ultra-thin body and method for forming the same | ||
| 摘要 | A FinFET device structure and method for forming the same is provided. The FinFET device structure includes an oxide layer formed over a substrate and a fin structure formed over the oxide layer. The fin structure is made of a semiconductor layer, and the semiconductor layer includes a first portion, a second portion and a third portion. The second portion is between the first portion and the third portion. The first portion, the second portion and the third portion construct a U-shaped trench, and the second portion is below the U-shaped trench. The FinFET device structure further includes a gate structure formed in the U-shaped trench. | ||
| 申请公布号 | US9620645(B1) | 申请公布日期 | 2017.04.11 |
| 申请号 | US201514871361 | 申请日期 | 2015.09.30 |
| 申请人 | Taiwan Semiconductor Manufacturing Co., Ltd. | 发明人 | Lai Cheng-Chieh;Chen Kuang-Hsin;Wu Yung-Chun;Yeh Mu-Shih |
| 分类号 | H01L29/16;H01L29/78;H01L29/423;H01L29/06;H01L29/161;H01L29/04;H01L29/66;H01L21/3065 | 主分类号 | H01L29/16 |
| 代理机构 | Haynes and Boone, LLP | 代理人 | Haynes and Boone, LLP |
| 主权项 | 1. A fin field effect transistor (FinFET) device structure, comprising: an oxide layer formed over a substrate; a fin structure formed over the oxide layer, wherein the fin structure is made of a semiconductor layer, and the semiconductor layer comprises a first portion, a second portion and the third portion, the second portion is between the first portion and the third portion, and wherein the first portion, the second portion and the third portion construct a U-shaped trench, and the second portion is below the U-shaped trench; and a gate structure formed in the U-shaped trench and over at least one of the first portion and the third portion. | ||
| 地址 | Hsin-Chu TW | ||