发明名称 Method for forming resist pattern
摘要 A method for forming a resist pattern comprising the steps of: forming a light-shield film on an overall surface of a transparent substrate; forming a resist layer and an organic film being capable of functioning as a trap layer or an electron beam buffer layer against electrons on an overall surface of the light-shield film in this order; carrying out exposure in a desired pattern above the organic film; and developing the resist layer and the organic film to form a desired pattern in the resist layer.
申请公布号 US6858375(B2) 申请公布日期 2005.02.22
申请号 US20020271555 申请日期 2002.10.17
申请人 SHARP KABUSHIKI KAISHA 发明人 KOBAYASHI SHINJI
分类号 G03F7/11;G03F1/08;G03F1/68;G03F1/70;G03F7/09;G03F7/20;H01L21/027;(IPC1-7):G03C5/00 主分类号 G03F7/11
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