| 摘要 |
PURPOSE:To augment the integration density of a space DRAM by a method wherein a memory cell is composed of a slot type capacity element provided on the surface of a semiconductor substrate and another switching element making a serial circuit upon the former element. CONSTITUTION:An N<+> type semiconductor substrate 1 comprising a single crystal silicon is utilized as one electrode of the capacity element C of a memory cell in a DRAM. The capacity C of the memory cell is mainly composed of a semiconductor substrate 1, a slot 2A, an insulating film 28 and a semiconductor region (conductor) 2C. An MISFETQ as the switching element of the memory cell is composed of a P type semiconductor plate 5 comprising a single crystal silicon provided on the upper part of a pair of capacity elements C specifically approached through the intermediary of another film 3. |
