| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device for suppressing an increase in the number of an etching process and deterioration in electrical characteristics of a semiconductor device as much as possible, and to provide a method for manufacturing the semiconductor device. <P>SOLUTION: In the semiconductor device, a pad electrode layer 14 is formed in which a first barrier layer 12 and an aluminum layer are laminated on the surface of a semiconductor substrate 10. A support substrate 16 is also adhered to the surface of the semiconductor substrate 10. A second barrier layer 19 is formed on the rear of the semiconductor substrate 10, and in a via hole 18 extending to the first barrier layer 12 from the rear of the semiconductor substrate 10. Further, a rewiring layer 21 is formed so that the inside of the via hole 18 is buried completely or incompletely. A ball-like terminal 22 is formed on the rewiring layer 21. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
