发明名称 SUBSTRATE FOR SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING SUBSTRATE FOR SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a substrate for semiconductor device which allows for further compaction of a semiconductor device, while increasing the formation density of the semiconductor devices.SOLUTION: A metal part 11 becoming a semiconductor element mounting part 11a and/or an electrode part 11b is provided on a matrix substrate 10, and an overhanging portion 11c is formed in the metal part 11. The overhanging portion 11c has a lower surface parallel with a direction perpendicular to the axial direction of the metal part 11, an upper surface formed continuously to the upper surface of the metal part 11, and a side face formed between the lower surface and upper surface. Consequently, the arrangement interval of the metal parts 11 can be reduced, while ensuring a minimum necessary overhanging amount for obtaining sufficient strength against missing, as the overhanging portion 11c provided in the metal part 11.SELECTED DRAWING: Figure 2
申请公布号 JP2016127261(A) 申请公布日期 2016.07.11
申请号 JP20150199424 申请日期 2015.10.07
申请人 HITACHI MAXELL LTD 发明人 GOROMARU YUYA;KOGA TATSUYA
分类号 H01L23/12 主分类号 H01L23/12
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