METHODS OF FORMING P-N JUNCTIONS IN SEMICONDUCTORS,申请号CAD620369-传众专利搜索

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发明名称	METHODS OF FORMING P-N JUNCTIONS IN SEMICONDUCTORS
摘要
申请公布号	CA620369(A)	申请公布日期	1961.05.16
申请号	CAD620369	申请日期
申请人	THE GENERAL ELECTRIC COMPANY LIMITED	发明人	JOHN REEVES;EMRYS G. JAMES;JAMES S. MILLER
分类号		主分类号
代理机构		代理人
主权项
地址

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