Method for producing a semiconductor element of a direct-converting x-ray detector

摘要

A production method of a semiconductor element of a direct-converting x-ray detector is disclosed, wherein at least one intermediate layer is applied to a semiconductor layer and at least one contact layer is applied to an exposed intermediate layer by chemically currentless deposition of a contact material from a solution in each instance. The materials for the individual layers are selected such that the electrochemical potential of the materials of the at least one intermediate layer is greater than the electrochemical potential of at least one element of the semiconductor layer and the electrochemical potential of the contact material of the contract layer is greater than the electrochemical potential of the materials of the intermediate layers. Semiconductor elements produced in accordance with the method, an x-ray detector with semiconductor elements, an x-ray system with an x-ray detector and also a CT system with an x-ray detector are also disclosed.

主权项

1. A method for producing a semiconductor element of a direct-converting x-ray detector, comprising:
generating a semiconductor layer on a basis of elements of groups II to VI; applying at least one intermediate layer by chemical currentless deposition of material of the at least one intermediate layer from a solution, with which the semiconductor layer is wetted; and applying at least one contact layer to the at least one intermediate layer by chemical currentless deposition of a contact material from a solution with which the at least one intermediate layer is wetted, wherein materials for the semiconductor layer, the at least one intermediate layer and the at least one contact layer are used such that the electrochemical potential of the material of the at least one intermediate layer is relatively greater than the electrochemical potential of at least one element of the at least one semiconductor layer, and the electrochemical potential of the contact material of the at least one contact layer is relatively greater than the electrochemical potential of the material of the at least one intermediate layer.