Combined ion beam and microwave irradiation means and method

摘要

An apparatus (10) is described for implanting ions (18) into a substrate (14) and annealing implant damage by irradiation with microwaves (26). In a preferred embodiment of the process (60), the microwaves (26) heat (66) the substrate (14) to a predetermined temperature (Tp) before ion implantation begins (68) and are left on (67) during implantation (69). When the desired implant dose has been achieved (70), the ion beam and microwave radiation are turned off (70, 72) at about the same time and the substrate (14) rapidly cooled (74) by radiation to the cold walls of the chamber (12), thereby preventing significant lateral dopant redistribution. The substrate (14) holding chamber (12) and its ion beam port (19) and microwave port (24) are designed to facilitate coupling of microwaves (26) into the substrate (14) and avoid coupling of the microwaves (26) into the ion implanter (16). <IMAGE>