METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE WITH CONSTANT WIDTH DEEP GROOVE ISOLATION,申请号US19910801865-传众专利搜索

首页产品黄页商标征信

会员服务注册登录

法人/股东/高管

发明名称	METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE WITH CONSTANT WIDTH DEEP GROOVE ISOLATION
摘要
申请公布号	US5200348(A)	申请公布日期	1993.04.06
申请号	US19910801865	申请日期	1991.12.03
申请人	HATACHI, LTD.	发明人	UCHIDA, AKIHISA;OKADA, DAISUKE;TAKAKURA, TOSHIHIKO;OGIUE, KATSUMI;TAMAKI, YOICHI;KAWAMURA, MASAO
分类号	H01L21/316;H01L21/331;H01L21/76;H01L21/762;H01L21/763;H01L21/768;H01L23/522;H01L29/73	主分类号	H01L21/316
代理机构		代理人
主权项
地址

您可能感兴趣的专利

NETWORK EQUIPMENT

REACTING METHOD FOR PERFLUOROALKYL IODIDE WITH OLEFIN COMPOUND

Electrochemical cell

Low power emergency telephone mode

Method and apparatus for testing integrated circuits

Apparatus and method for processing asynchronous transfer mode cells

Spindle control circuit of optical disk drive

Optical disk and apparatus for reproducing signal without crosstalk

Element generator for dither matrix and a dithering apparatus using the same

Contents addressable memory

Microwave waveguide seal assembly

Snubbing clamp network

Fast-fully restoring polarity control circuit

Time varying electrical conductivity tester using frequency discriminator and or power detector and methods thereof

Sequential, differential ignition of series operated arc lamps

Electronic sound generator with mechanical movement feature

Point level switch

Polymerization of carbon monoxide and ethylene using catalyst containing non-coordinating, non-acidic anion

9-purinyl phosphonic acid derivitives for treating gout