| 摘要 |
<p>A flat panel detector (20) for radiation imaging includes an array of pixels (22) arranged in rows and columns. Each of the pixels has a pixel electrode (36) to store a charge proportional to the exposure of the pixel to radiation. A radiation transducer (CSE) is disposed over the array and is to be exposed to incident radiation. A plurality of source lines (26) are provided with each source line interconnecting the pixels in individual ones of one of the rows or columns of the array. A plurality of gate lines (24) are also provided, each interconnecting the pixels in individual ones of the other of the rows or columns of the array. The source and gate lines cross one another to define a plurality of overlapping nodes. Shielding means shield the gate lines from the source lines at the overlapping nodes to reduce parasitic capacitance at the overlapping nodes. In one embodiment, the shielding means is in the form of a biased metal shielding plate (54) disposed between the gate and source lines adjacent the overlapping nodes. In another embodiment, the shielding means is in the form of a shielding pad (275) formed of semiconductor material disposed between the gate and source lines adjacent the overlapping nodes and connected to a biased metal conductor (277).</p> |
