| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a non-volatile semiconductor device which assures less fluctuation in characteristics of a memory cell. <P>SOLUTION: A plurality of belt type element isolating films 2 extending in a first direction are formed on the surface of a first conductivity type substrate 12, and a second conductivity type diffusing layer 2 is formed intermittently sandwiching a channel region along the first direction to a region between these element isolating films 2. A plurality of control gates 3 extending in a second direction crossing orthogonally with the first direction are also formed in a region including the region immediately above the channel region, and a charge accumulating layer 7 is formed between a pair of the second conductivity type diffusing layer 1 and a control gate 3 sandwiching the channel region. A contact 5 is formed on the second conductivity type diffusing layer 1, the contacts 5 connected to a pair of second conductivity type diffusing layers 1 sandwiching the element isolating film 2 are connected with the first wire 16, and this first wire 16 is connected to a second wire 6 through a via. Consequently, a pair of second conductivity type diffusing layers 1 sandwiching the channel region are mutually connected to different second wires 6. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
