发明名称 PRODUCTION OF SINTERED SILICON NITRIDE
摘要 PURPOSE:To obtain a sintered silicon nitride resistant to the deterioration of strength even at high temperature by baking a formed mixture composed of silicon nitride powder, rare-earth metal oxide powder and carbide powder under specific condition. CONSTITUTION:Raw materials composed mainly of silicon nitride powder, rare- earth metal oxide powder and carbide powder are mixed with each other and formed to obtain a formed article. The article is baked in a nitrogen atmosphere at 1700-2100 deg.C under a condition satisfying the formula (0.025x-0.05)<y<=0.1x [x is baking time (hr); y is (weight (g) of the formed article filled in a capsule)/(inner volume (cc) of the capsule)]. The powder of the rare-earth metal oxide is preferably oxide of Y and/or Yb. The carbide powder is preferably e.g. SiC powder of alpha-form, beta-form or amorphous state.
申请公布号 JPH0459659(A) 申请公布日期 1992.02.26
申请号 JP19900172928 申请日期 1990.06.29
申请人 NGK INSULATORS LTD 发明人 TAKAHASHI AKIRA;WATANABE KEIICHIRO
分类号 C04B35/584;C04B35/593;C04B35/64;C04B41/50;C04B41/87 主分类号 C04B35/584
代理机构 代理人
主权项
地址