发明名称 SHORT-CIRCUIT DETECTION CIRCUIT FOR PROM
摘要 <p>Test circuitry is included in a PROM memory for detecting shorts between bit lines and word lines and shorts or leaks in a memory cell. The circuitry enables a selected positive voltage to be applied across all memory cells in the memory so that the existance of leaky memory cells or shorts in the memory can be detected during testing. The test circuitry has no appreciable effect on the memory during normal operation of the memory.</p>
申请公布号 JPS60136100(A) 申请公布日期 1985.07.19
申请号 JP19840141581 申请日期 1984.07.10
申请人 MONORISHITSUKU MEMORY-ZU INC 发明人 ARUBAATO CHIYAN;MAAKU FUITSUTSU PATORITSUKU;DON GODAADO;ROBAATO JIEI BOSUNIYAKU;SHIRASU TSUYUUI
分类号 G11C17/08;G11C29/00;G11C29/02;G11C29/04;G11C29/50 主分类号 G11C17/08
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