发明名称 APPARATUS FOR INSPECTING DEFECT OF PHOTOMASK PATTERN AND METHOD FOR INSPECTING DEFECT OF PHOTOMASK PATTERN
摘要 PURPOSE: To make it possible to discriminate true defect and pseudo defect of even a photomask including very small auxiliary patterns and to detect only the true defect by adopting the constitution of not outputting the pattern as defect if a specific condition is satisfied. CONSTITUTION: The two patterns and the respective auxiliary patterns 4 of the one pattern and the respective auxiliary patterns 7 of the other pattern are first compared in a defect detecting section. Whether the patterns have the same coordinates as each other or not is detected. Next, the sizes of the respective patterns are measured and whether the sizes are larger than a certain prescribed value or not is detected if the coordinates are detected to be the same. Namely, both of the respective patterns are the auxiliary patterns or not is detected and if either one thereof is larger than the prescribed value, the patterns are detected as the defect. If both are smaller than the prescribed value, the patterns are outputted as normal. The output of the micropatterns as the defect is averted, insofar as these patters are the micropatterns, such as auxiliary patterns, which satisfy the second condition, even if there is mispositioning within the range satisfying the first condition.
申请公布号 JPH08234413(A) 申请公布日期 1996.09.13
申请号 JP19950036912 申请日期 1995.02.24
申请人 MITSUBISHI ELECTRIC CORP;RYODEN SEMICONDUCTOR SYST ENG KK 发明人 AZUMAGUCHI HISAYOSHI;HOSONO KUNIHIRO
分类号 G01N21/956;G03F1/84;H01L21/027 主分类号 G01N21/956
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