发明名称 STRUCTURE OF PHASE SHIFT MASK, EXPOSING SYSTEM, EXPOSING DEVICE AND SEMICONDUCTOR DEVICE
摘要 <p>PURPOSE:To reduce the cost of the mask by forming light shielding body patterns and shifter patterns on separate substrates, disposing two sheets of the masks to face each other and aligning the masks, then exposing the masks. CONSTITUTION:The light shielding body patterns of Cr are formed in accordance with previously formed pattern data on a quartz substrate 5 and further, the shifter parts considered to exhibit the phase shift effect are plotted in combination with these patterns on the substrate 6 constituted by coating the substrate with an SOG film and a photosensitive register and are developed; thereafter, the SOG is etched and the shifter patterns 2 are formed on the quartz substrate 6. The mask 1 formed with the light shielding body patterns and the mask 2 formed with the shifter patterns in such a manner are separately formed and after the relative positional relations of both 1, 2 are aligned, these masks are exposed by using the light transmitted through both. Then, the production as well as inspection and correction are greatly simplified in the production as well as inspection and correction of the phase shift mask.</p>
申请公布号 JPH05134387(A) 申请公布日期 1993.05.28
申请号 JP19910295998 申请日期 1991.11.12
申请人 SEIKO EPSON CORP 发明人 UMEDA KATSUMI
分类号 G03F1/30;G03F1/68;G03F7/20;G03F9/00;H01L21/027;H01L21/30 主分类号 G03F1/30
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