| 摘要 |
<p>PURPOSE:To manufacture a heat-resistant thermistor whose thermistor constant is 6000 or higher at a low operating voltage by a method wherein a diamond is provided on a substrate, a mask is formed selectively on the diamond, other parts are doped with impurities so as to be separated from each other, the impurities are annealed and, after that, electrodes are formed on impurity regions. CONSTITUTION:One pair of electrodes 5-1, 5-2 are formed on a diamond by a vacuum vapor deposition method or a sputtering method. As the electrodes, titanium or tungsten and a metal which can be bonded to it as required are used in a two-layer film and are brought into close contact with a P-type impurity region. Wires 7-1, 7-2 are bonded respectively to them; a protective film which is used also as an antireflection film of a silicon nitride film 6 is formed in a thickness of 500 to 5000Angstrom on the whole surface. Then, a constitution of the electrode 5-1-a P-type impurity region 10-1-a vacuum or substantially intrinsic thermosensitive part 3 as a thermistor-another P-type impurity region 10-2the electrode 5-2 is formed electrically; this can be formed as a heat-sensing structure of a planar type.</p> |
