发明名称 Semiconductor substrate cleaning solutions, methods of forming the same, and methods using the same
摘要 Cleaning solutions for application to semiconductor substrates comprise hydrofluoric acid, hydrogen peroxide, isopropyl alcohol, and water. Methods of cleaning semiconductor substrates comprise contacting the semiconductor substrates having contaminants contained thereon with cleaning solutions comprising hydrofluoric acid, hydrogen peroxide, isopropyl alcohol, and water; contacting the semiconductor substrates with first baths of water to remove the cleaning solutions contained on the semiconductor substrates; contacting the semiconductor substrates with second baths containing water to remove the contaminants contained on the semiconductor substrates; and rotating the semiconductor substrates to remove water remaining thereon to clean the semiconductor substrates.
申请公布号 US5846921(A) 申请公布日期 1998.12.08
申请号 US19970805210 申请日期 1997.02.27
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 GIL, JUNE-ING;YI, SEOK-HO;CHON, SANG-MUN;CHUNG, HO-KYOON
分类号 H01L21/304;C11D3/39;C11D7/08;C11D7/26;C11D11/00;(IPC1-7):C11D7/54;B08B3/08;C11D7/28 主分类号 H01L21/304
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