Method of manufacturing a photovoltaic device

摘要

A method to improve CdTe-based photovoltaic device efficiency is disclosed, the method including steps for removing surface contaminants from a semiconductor absorber layer prior to the deposition or formation of a back contact layer on the semiconductor absorber layer, the surface contaminants removed using at least one of a dry etching process and a wet etching process.

主权项

1. A method of manufacturing a photovoltaic device comprising the steps of:
depositing a semiconductor absorber layer adjacent to a substrate; cleaning the semiconductor absorber layer to remove contaminants therefrom using in succession a dry etch followed by a wet etch, the wet etch performed using a solution including HCl/H3PO4 that results in the semiconductor absorber layer having a Te-rich surface and a Cd/Te ratio that is lower than the Cd/Te ratio obtained when the wet etch is performed using a solution including only HCl; in a desorption step, placing the semiconductor layer and the substrate in a vacuum and applying thermal energy to remove surface moisture from the semiconductor absorber layer; and depositing a back contact layer adjacent to the semiconductor absorber layer; wherein the cleaning the semiconductor absorber layer step and the desorption step are performed prior to the deposition of the back contact layer.