发明名称 THERMAL FLOW RATE SENSOR
摘要 <p>PURPOSE:To make the output of a sensor highly accurate by forming a metal film through an electric insulating film with respect to a heat-sensitive resistor pattern. CONSTITUTION:An alumina substrate is used for an insulating substrate 11. Cu is provided as a metal film 12 on the substrate by vapor deposition. An electric insulating film 13 comprising SiO2 is further formed on the film 12. An Ni film is formed on the film 13 by a vapor deposition method. Thereafter, a heat-sensitive resistor pattern part 14 and electrodes 15 are formed by etching. Lead wires 16 are connected to the electrodes 15. The upper parts are reinforced with glass 17. A protecting film 18 is provided. Thus, a flow rate sensor is formed. As a result, the surface-temperature distribution of the flow rate sensor is about 3 deg.C at the hat-sensitive resistor pattern part. The distribution is reduced to about 1/5 the conventional distribution. Namely, the temperature of the heat- sensitive resistor pattern part can be made uniform by arranging the metal film at the heat-sensitive resistor pattern part.</p>
申请公布号 JPH03248017(A) 申请公布日期 1991.11.06
申请号 JP19900046214 申请日期 1990.02.27
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 TANIGAWA HIDEYUKI
分类号 G01F1/68;G01F1/692 主分类号 G01F1/68
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