发明名称 |
Method for crystallizing amorphous silicon film |
摘要 |
Disclosed is a method for crystallizing a single crystalline Si film on an amorphous substrate, such as a glass substrate or a plastic substrate. The method includes the steps of selectively irradiating the laser beam onto a pixel section TFT forming region and a peripheral circuit TFT forming region of the amorphous silicon film through primary and secondary laser irradiation processes, thereby forming a poly-silicon film and irradiating the laser beam onto one of grains formed in the poly-silicon film through a third laser irradiation process, thereby forming a single crystalline silicon region having a desired size on a predetermined portion of the amorphous silicon film. The amorphous silicon film is locally crystallized into the single crystalline silicon film so that characteristics of TFTs for the pixel section and the peripheral circuit are improved while ensuring high uniformity.
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申请公布号 |
US7033915(B2) |
申请公布日期 |
2006.04.25 |
申请号 |
US20040881257 |
申请日期 |
2004.06.30 |
申请人 |
BOE HYDIS TECHNOLOGY CO., LTD. |
发明人 |
RYU MYUNG KWAN;LEE HO NYEON;PARK JAE CHUL;KIM EOK SU;SON KYOUNG SEOK;LEE JUN HO;KWON SE YEOUL |
分类号 |
G02F1/136;H01L21/20;B23K26/06;H01L21/00;H01L21/26;H01L21/268;H01L21/336;H01L21/77;H01L21/84;H01L27/12;H01L27/32;H01L29/786 |
主分类号 |
G02F1/136 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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