MANUFACTURING METHOD OF HETERO-EPITAXIAL LAYER USIDETERMINATION OF POTASSIUM IONS IN FLUIDS NG RE-GROWING PROCESS

摘要

The method uses a regrowing process to form epitaxial layers onto a substrate, the epitaxial layers having different structures respectively, thereby mounting multifunctional elements on a single chip. The method comprises the steps of depositing a dielectric layer (13) onto a first epitaxial layer (12) grown on a semiconductor substrate (11), etching the desired portions of the layers (12,13) to form a mesa structure (12a,13a), regrowing second epitaxial layer (14) thereon, and removing the dielectric layer (13a) and the second epilaxial layer (14a) formed on the layer (13a) by using a lift-off process, thereby forming two different epitaxial layers (12a,14) on a substrate (11).