| 摘要 |
PROBLEM TO BE SOLVED: To prevent the decline in the light emission efficiency by forming a light emitting region generated by current injection which is one of active layers, in other region than a region right above a growth suppressing structure. SOLUTION: On a sapphire substrate 100, selectively grown masks 150, 151 are so formed as to cross at right angles each other. After that, an n-GaN continuous film semiconductor layer 102 is grown. Then, a mesa stripe 110 is formed nearly parallelly with the selectively grown mask 150 in other region than a region 152 right above the selectively grown mask 150. Nextly, a p-type electrode 111 of a stripe geometry is formed on an upper face of the nesa stripe 110 and then a backside of a wafer is polished to expose the n-GaN continuous film semiconductor layer 102 and an n-type electrode 112 is formed on the entire surface of the n-GaN continuous film semiconductor layer 102. After that, at a position away from the selectively grown mask 151, a mirror surface which constitutes a laser resonator is formed by cleaving. By specifying the shape of the selectively grown masks, the relative position of the mesa stripe 110, and the relative position of the laser resonator mirror for cleaving, the decline in the light emission efficiency can be prevented. |
