| 摘要 |
A plasma processing system and method for producing a cleaner and more controlled environment for processing substrates such as semiconductor wafers. The plasma processing system includes a process chamber including an inner and an outer wall, a heating element thermally coupled to the inner wall of the process chamber, a bias shield, and an electrostatic shield. The processing system also includes an inductive coil surrounding the process chamber for coupling RF power to the gas inside the process chamber, thereby producing a plasma. RF power can also be applied to a wafer holder, such as an electrostatic chuck which can also be heated or cooled. The method of cleaning such a plasma processing system includes applying a bias voltage to the bias shield, heating the process chamber using the heater element, and cleaning the internal surfaces -- starting with the largest surface and progressing to the smallest surface.
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