| 摘要 |
<p>PURPOSE:To reduce the rate of decrease in thickness of a thin film for forming an electron emitting portion and to reduce variations in element characteristic by using a metallic colloidal solution in the formation of the thin film. CONSTITUTION:Between element electrodes 5, 6 provided on an insulating substrate 1, a metallic colloidal solution is applied onto the substrate 1 and left there to form a thin film. For the metallic colloidal solution, water or an organic solvent solution is used with a metal such as Pd, Ag, Au, Pt or Pb, or a colloid such as SnO2 and Fe2O3. Next, the thin film is heat treated to form a film of metallic particles or a film of metal oxide particles, which is then patterned to form a thin film 2 for forming an electron emitting portion. Then current-passing process is performed to form the electron emitting portion 3. The thin film made of particles whose particle diameters are relatively uniform from the onset can thus be formed, and the rate of decrease in thickness of the thin film obtained can be reduced and variations in element characteristic can be reduced.</p> |
