| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide an exposing mask correcting the fine deviation of a pattern by proximity effect occurring when super-high resolution technique is used. SOLUTION: As to this exposing mask constituted of a phase shift film having an asymmetric hole pattern which has a second hole pattern 61 in the vicinity of a first hole pattern 6, and which does not have another hole pattern in the point-symmetric position of the pattern 61 with respect to the pattern 6 and a transparent base plate; the correction amount of the positions of the patterns 6 and 61 is calculated in accordance with pitch between the patterns 6 and 61, and the positions of the patterns 6 and 61 are corrected so as to avoid that the fine deviation of the pattern caused by the light proximity effect made stronger by the phase shift film 2.</p> |
