| 摘要 |
A semiconductor device includes a semiconductor substrate, and a ferroelectric capacitor provided on the semiconductor substrate, the ferroelectric capacitor comprising a lower electrode, a first ferroelectric film provided on the lower electrode including Pb(Zr<SUB>x</SUB>Ti<SUB>1-x</SUB>)O<SUB>3 </SUB>and having a tetragonal crystal system whose crystal direction is oriented in a <111> direction, a second ferroelectric film provided on the first ferroelectric film including Pb(Zr<SUB>y</SUB>Ti<SUB>1-y</SUB>)O<SUB>3 </SUB>and having a tetragonal crystal system whose crystal direction is oriented in the <111> direction, and an upper electrode provided on the second ferroelectric film.
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