| 摘要 |
The present invention relates to a gate driving circuit for preventing an arm short circuit and, more specifically, to a gate driving circuit for preventing an arm short circuit, which prevents a semiconductor device (IGBT) from being damaged by the arm short circuit. According to an embodiment of the present invention, the gate driving circuit may comprise: a driving signal transmission unit outputting a gate driving signal to a variable resistance unit; the variable resistance unit outputting the gate driving signal to a gate terminal of the semiconductor device; a resistance control unit controlling internal resistance of the variable resistance unit; and a driving control unit controlling output of the gate driving signal. |
