发明名称 SEMICONDUCTOR INTEGRATED CIRTUIT HAVING PLULARITY OF POWER DOMAINS
摘要 <p>A semiconductor integrated circuit having plural power domains is provided to improve power consumption and operation speed in a multi power domain system. A semiconductor integrated circuit includes a first power domain and a second power domain. A voltage supply control part(110) supplies a first voltage to the first power domain and a second voltage to the second power domain. A switch block(200) is controlled by the power supply control part, and transfers a supply current of the first power domain to the second power domain according to an operation mode. The operation mode includes a first operation mode where the first voltage and the second voltage have the same voltage level, and a second operation mode where the first voltage and the second voltage have different voltage levels.</p>
申请公布号 KR20070089439(A) 申请公布日期 2007.08.31
申请号 KR20060019485 申请日期 2006.02.28
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 LEE, HOI JIN
分类号 G11C5/14 主分类号 G11C5/14
代理机构 代理人
主权项
地址