| 摘要 |
A method for fabricating a three-dimensional multi-gate device includes steps of providing a semiconductor substrate and forming a silicon fin on the semiconductor substrate, the silicon fin having a top surface and two side surfaces; forming a gate structure on the silicon fin, the gate structure partially covering the top surface and the two side surfaces of the silicon fin, and forming a spacer structure on both sides of the gate structure; forming two doped regions in the silicon fin under both sides of the gate structure; and forming a stress-adjusting layer covering the gate structure.
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