| 摘要 |
PROBLEM TO BE SOLVED: To provide a field-effect transistor which can make small transient fluctuations of a channel current caused by fluctuations in a drain voltage and which also can facilitate the circuit design. SOLUTION: A second conductive layer 12 is formed between a first conductive layer 11 as a channel layer and a layer having a deep level. A second conductive layer 12 cuts off a response of the deep level to a changeΔVd of a drain voltage. At this time, an ohmic electrode 6 of the second conductive layer 12 is short-circuited to both of source and drain electrodes 3 and 4 of the first conductive layer in response to the changeΔVd. Thereby a potential change by gating the second conductive layer 12 is set atΔVd/2 even to a DC or a transient response, thus eliminating fluctuations of the channel current toΔVd.
|
