COMPLEMENTARY METAL OXID SEMICONDUCTOR VOLTAGE LEVEL SHIFT CIRCUIT

摘要

PURPOSE: A CMOS voltage level shift circuit is provided to be applied in a twin-well process and in a mixed IC, by realizing a voltage transistor profitable in a power consumption and area aspect using a CMOS level shift. CONSTITUTION: The circuit includes: an inverter(41) inverting an input signal by being connected to the first Vdd power supply voltage and Vss power supply voltage; the first NMOS transistor(42) whose gate terminal is connected to the inverter and a source terminal is connected to the Vss power supply voltage and a drain terminal is connected to an output terminal; the first PMOS transistor(43) whose drain terminal and gate terminal are connected to the drain terminal of the first NMOS transistor in common and a source terminal is connected to the second Vdd power supply voltage; the second PMOS transistor(44) whose gate terminal is connected to the gate terminal of the first PMOS transistor and a source terminal is connected to the second Vss power supply voltage and a drain terminal is connected to the output terminal; the second NMOS transistor(45) whose gate terminal is connected to the input signal and a drain terminal is connected to the drain terminal of the second PMOS transistor and a source terminal is connected to the Vss power supply voltage; the third PMOS transistor(46) whose gate terminal is connected to the output terminal of the second PMOS transistor and a source terminal is connected to the second Vdd power supply voltage; and the third NMOS transistor(47) whose source terminal is connected to the Vss power supply voltage and a drain terminal is a common output terminal.