| 摘要 |
PURPOSE:To make it possible to selectively perform ion implantation having an ultra high energy with high accuracy and good workability to the title resist by composing the photoresist of a cresol-novolak type resist having a substituent contg. a halogen atom. CONSTITUTION:The photoresist is composed of a base polymer consisting of the cresol-novolak type resist having the substituent contg. the halogen atom, namely a polymer shown by formula I. In formula I, X1, X2, and Y1-Y3 are each hydrogen atom, however, at least one of the groups X1, X2 and Y1-Y3 contg. in at least one of constituting unit selected from among (n) numbers of constituting units of the polymer, is a group substd. with the halogen atom. Accordingly, the photoresist has the improved ion stopping power comparing with a conventional resist. Thus, the ion implantation mask of a fine pattern having the high accuracy can be formed by pattern-wisely exposing the photoresist and developing it using a mask, without so much increasing the thickness of the mask, in the ion implantation having the high energy. |
