Charge transfer device memory matrix - with continuous conductive strip across insulating layer of each electrode row

摘要

A memory matrix consisting of several 2- or 3-phase charge transfer devices carries an insulating layer with a row of electrodes, sepd. by gaps on a doped semiconductor substrate. A second insulating layer is added over each electrode row and each of these layers carries a continuous strip of conductive material across the whole row. This results in a simple design which can be produced in conventional appliances without much extra effort. The matrix requires less instrumentation for addressing and coding. Relatively wide gaps can be permitted between the electrodes in each row.