发明名称 DISPOZITIV SEMICONDUCTOR CU EFECT DE MEMORIE
摘要 <p>A semiconductor device including a heterojunction between an indirect semiconductor and a direct semiconductor of lower band gap which exhibits a notch-spike direct-indirect structure and circuit means for obtaining a current-voltage characteristic with two branches or limbs and switching from one branch to the other controlled by electron population in the direct notch.</p>
申请公布号 RO68248(A2) 申请公布日期 1981.03.30
申请号 RO19740080464 申请日期 1974.11.08
申请人 PETRESCU-PRAHOVA,IULIAN B.,RO;MIHAILOVICI,PAUL C.,RO;CONSTANTINESCU,CRISTIAN G.,RO 发明人 PETRESCU-PRAHOVA,IULIAN B.,RO;MIHAILOVICI,PAUL C.,RO;CONSTANTINESCU,CRISTIAN G.,RO
分类号 H01L29/205;H01L29/74;H01L29/861;H01L31/109;H01L33/00 主分类号 H01L29/205
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