发明名称 PATTERN FORMATION
摘要 PURPOSE:To prevent a stepped part from deforming thereby forming a pattern with high precision by forming a radiation sensitive resin layer on the stepped part. CONSTITUTION:A trench 12 is formed on a substrate 11 to form an oxide film 13. The oxide film 13 is coated with a positive type resist film 14 to form a removed part 14A of the resist film 14. The whole surface of the substrate 11 is coated with a water soluble organic film 15 as a mix preventive layer. Next, the whole surface is coated with a negative type resist film 16. The negative type resist film 16 is selectively removed by photoexposure process using ultraviolet ray irradiation to form a resist part 16A of the resist film 16 only on the trench 12 and peripheral part thereof. At this time, the film 15 is also removed leaving a residual part 15A below the residual part 16A. The oxide film 13 is selectively removed by etching process using the resist film 14 as a mask leaving residual parts 15A, 16A as they are to form a removed part 13A and a circuit pattern is formed. Through these procedures, the trench 12 can be prevented from deforming thus enabling the excellent trench 12 to be formed. Consequently, a pattern can be formed with high precision.
申请公布号 JPH01258425(A) 申请公布日期 1989.10.16
申请号 JP19880086893 申请日期 1988.04.08
申请人 MATSUSHITA ELECTRON CORP 发明人 NAKAGAWA KATSUNOBU
分类号 G03F7/26;G03C1/00;G03C5/00;G03F7/00;G03F7/095;H01L21/027;H01L21/30 主分类号 G03F7/26
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