| 摘要 |
PROBLEM TO BE SOLVED: To provide a COB(capacitor over bit line) DRAM and like which is easy to produce by simplifying the production process and to improve the integration, and a manufacturing method thereof. SOLUTION: First interlayer insulating layers 12 and 13 are deposited on a transistor formed on a semiconductor layer 3, a first connecting plug 17 for bit contact and a second connecting plug 18 for storage node contact are made to be in contact with the transistor and simultaneously formed so as to be buried in the first interlayer insulating layer 12, second interlayer insulating layers 20, 21 and 25 are deposited on the overall surface, a bit line BL is made to be in contact with the first connecting plug 17 and formed so as to be buried in the second interlayer insulating layer. Subsequently, a portion forming a capacitor of the second interlayer insulating layer is removed to expose upper surface of the second connecting plug 18 by etching and a storage node electrode is formed from the upper side of the exposed second connecting plug to the upper layer side of the bit line BL. |
