发明名称 |
ELECTRON BEAM EXPOSURE SYSTEM, ELECTRON BEAM EXPOSING METHOD, AND METHOD FOR FABRICATING SEMICONDUCTOR ELEMENT |
摘要 |
PROBLEM TO BE SOLVED: To provide an electron beam exposure system in which a wafer can be irradiated accurately with a plurality of electron beams. SOLUTION: The electron beam exposure system for irradiating a wafer with a plurality of electron beams comprises a section for generating a plurality of electron beams, a first deflecting section for deflecting the plurality of electron beams independently, a section for acquiring the quantity of current of each of the plurality of electron beams, a section for calculating the correction value of irradiating position for each of the plurality of electron beams, and a section for controlling the deflecting section based on the correction value. |
申请公布号 |
JP2002158156(A) |
申请公布日期 |
2002.05.31 |
申请号 |
JP20000351055 |
申请日期 |
2000.11.17 |
申请人 |
ADVANTEST CORP |
发明人 |
HARAGUCHI TAKESHI;YASUDA HIROSHI;HAMAGUCHI SHINICHI |
分类号 |
G03F7/20;H01J37/04;H01J37/147;H01J37/304;H01J37/305;H01J37/317;H01L21/027 |
主分类号 |
G03F7/20 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|