发明名称 ELECTRON BEAM EXPOSURE SYSTEM, ELECTRON BEAM EXPOSING METHOD, AND METHOD FOR FABRICATING SEMICONDUCTOR ELEMENT
摘要 PROBLEM TO BE SOLVED: To provide an electron beam exposure system in which a wafer can be irradiated accurately with a plurality of electron beams. SOLUTION: The electron beam exposure system for irradiating a wafer with a plurality of electron beams comprises a section for generating a plurality of electron beams, a first deflecting section for deflecting the plurality of electron beams independently, a section for acquiring the quantity of current of each of the plurality of electron beams, a section for calculating the correction value of irradiating position for each of the plurality of electron beams, and a section for controlling the deflecting section based on the correction value.
申请公布号 JP2002158156(A) 申请公布日期 2002.05.31
申请号 JP20000351055 申请日期 2000.11.17
申请人 ADVANTEST CORP 发明人 HARAGUCHI TAKESHI;YASUDA HIROSHI;HAMAGUCHI SHINICHI
分类号 G03F7/20;H01J37/04;H01J37/147;H01J37/304;H01J37/305;H01J37/317;H01L21/027 主分类号 G03F7/20
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