SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE & METHOD FOR MANUFACTURING THE SAME

摘要

a P-type or an N-type semiconductor substrate(11) having a circuit region; more than one P-type wells(13,15) or N- type wells(14,16) formed on the semiconductor substrate(11); p+ regions(21) or n+ regions(19,20) which are the source/drain of the semiconductor substrate, being formed on the well regions; a gate(18) formed on top of the well region(14,15); an electrode connection means formed on top of the p+ regions and the n+ regions; and a pad means(30) connected to one of the n+ regions(20).