摘要 |
A device which is used to replace entire defective rows and/or columns in memory systems. The device uses one or more memory storage devices which may contain faulty memory cells, in conjunction with control circuitry and a substitute memory store. When a row or column in one of the planes within the memory storage device is addressed, and the said row or column contains a faulty cell, faulty cells, or faulty device row or column drivers then the access to that row or column is diverted to one of the planes within the substitute memory store which may replace the entire row or column which is faulty. All access modes for standard memory modules are supported.
|