发明名称 SEMICONDUCTOR DEVICE
摘要 PURPOSE: A semiconductor device capable of increasing a junction strength between a pad and a wire while forming a structure that is strong against a stress is provided. CONSTITUTION: An interconnection(8) formed on a chip and a pad(3) arranged by interposing an interlayer film(7) therebetween and joined with a bonding wire(6) are connected to each other by a contact(9). The contact is disposed at peripheral part of the pad. The contact of number corresponding to a region joined with the bonding wire is disposed at center part of the pad. The pad is formed in a rectangle shape. The contact is formed in a ring shape and equal interval at peripheral part and center part of pad. Thereby, it is possible to increase the junction strength between the pad and the wire while forming a structure that is strong against a stress.
申请公布号 KR20000016849(A) 申请公布日期 2000.03.25
申请号 KR19990012041 申请日期 1999.04.07
申请人 FUJITSU LIMITED 发明人 GATO, DAKAHIRO
分类号 H01L23/52;H01L21/3205;H01L21/60;H01L23/12;H01L23/485 主分类号 H01L23/52
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