Fabrication of wire bond pads over underlying active devices, passive devices and/or dielectric layers in integrated circuits

摘要

A wire connection structure for an integrated circuit (IC) die includes a semiconductor wafer with an active device and/or a passive device. One or more dielectric layers are arranged adjacent to the active and/or passive device. One or more metal interconnect layers are arranged adjacent to the active and/or passive device. A contact pad is arranged in an outermost metal interconnect layer. A passivation layer is arranged over the outermost metal interconnect layer and includes at least one passivation opening that exposes the contact pad. A bond pad is arranged over the passivation layer and the active and/or passive device and is connected to the contact pad through the passivation opening. Formation of the bond pad does not damage the active and/or passive device.